PZTA42 T/R NXP Semiconductors, PZTA42 T/R Datasheet - Page 3

• Manufacturer Part Number: PZTA42 T/R
• Description: Transistors Bipolar - BJT TRANS HV TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PZTA42 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 300 V
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 50 MHz
• Dc Collector/base Gain Hfe Min: 25 at 1 mA at 10 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 1200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 1000
• Part # Aliases: PZTA42,115

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
CHARACTERISTICS
T
1999 May 21
R
R
I
I
h
V
V
C
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BEsat
NPN high-voltage transistor
th j-a
th j-s
re
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
feedback capacitance
transition frequency
PARAMETER
PARAMETER
I
I
V
I
I
I
I
E
C
C
C
C
C
CE
I
I
I
= 0; V
= 0; V
= 20 mA; I
= 20 mA; I
= i
= 10 mA; V
C
C
C
= 10 V
= 1 mA
= 10 mA
= 30 mA
c
= 0; V
CB
BE
3
CONDITIONS
= 200 V
= 6 V
CB
B
B
CE
= 2 mA
= 2 mA
= 20 V; f = 1 MHz
= 20 V; f = 100 MHz 50
note 1
CONDITIONS
−
−
25
40
40
−
−
−
MIN.
VALUE
104
23
20
100
−
−
−
500
900
3
−
Product data sheet
MAX.
PZTA42
UNIT
K/W
K/W
nA
nA
mV
mV
pF
MHz
2
.
UNIT