PZTA42 T/R NXP Semiconductors, PZTA42 T/R Datasheet - Page 4

• Manufacturer Part Number: PZTA42 T/R
• Description: Transistors Bipolar - BJT TRANS HV TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PZTA42 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 300 V
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 50 MHz
• Dc Collector/base Gain Hfe Min: 25 at 1 mA at 10 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 1200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 1000
• Part # Aliases: PZTA42,115

NXP Semiconductors
PACKAGE OUTLINE
1999 May 21
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
NPN high-voltage transistor
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT223
1.8
1.5
A
0.10
0.01
A
1
1
y
0.80
0.60
b
p
IEC
e
3.1
2.9
1
b
1
b
0.32
0.22
D
e
1
c
2
b
6.7
6.3
D
p
JEDEC
4
3.7
3.3
E
REFERENCES
3
0
4.6
e
w
B
M
2.3
e
SC-73
B
scale
1
EIAJ
4
2
c
H
7.3
6.7
E
A
4 mm
1.1
0.7
L
1
p
0.95
0.85
Q
0.2
v
H
E
E
detail X
0.1
w
PROJECTION
EUROPEAN
0.1
y
A
L
p
Q
Product data sheet
X
ISSUE DATE
PZTA42
97-02-28
99-09-13
v
A
M
A
SOT223