BCP55 /T3 NXP Semiconductors, BCP55 /T3 Datasheet - Page 18

• Manufacturer Part Number: BCP55 /T3
• Description: Transistors Bipolar - BJT TRANS MED PWR TAPE13
• Manufacturer: NXP Semiconductors

Specifications of BCP55 /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 180 MHz
• Dc Collector/base Gain Hfe Min: 63 at 5 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Continuous Collector Current: 1 A
• Maximum Power Dissipation: 960 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: BCP55,135

NXP Semiconductors
BCP55_BCX55_BC55PA
Product data sheet
Fig 26. Reflow soldering footprint SOT1061 (HUSON3)
2.3
Reflow soldering is the only recommended soldering method.
1.05
All information provided in this document is subject to legal disclaimers.
0.6
Rev. 8 — 24 October 2011
0.55
solder paste = solder lands
solder resist
BCP55; BCX55; BC55PA
occupied area
60 V, 1 A NPN medium power transistors
2.1
1.3
0.4
0.5
1.6
1.7
0.5 (2×)
0.4 (2×)
Dimensions in mm
0.5 (2×)
sot1061_fr
0.25
0.25
0.25
© NXP B.V. 2011. All rights reserved.
0.6 (2×)
1.1
1.2
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