BCP55 /T3 NXP Semiconductors, BCP55 /T3 Datasheet - Page 6

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BCP55 /T3

Manufacturer Part Number
BCP55 /T3
Description
Transistors Bipolar - BJT TRANS MED PWR TAPE13
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCP55 /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
60 V
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
180 MHz
Dc Collector/base Gain Hfe Min
63 at 5 mA at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-223
Continuous Collector Current
1 A
Maximum Power Dissipation
960 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
BCP55,135
NXP Semiconductors
6. Thermal characteristics
BCP55_BCX55_BC55PA
Product data sheet
Table 7.
[1]
[2]
[3]
[4]
[5]
Symbol
R
R
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
BCP55
BCX55
BC55PA
BCP55
BCX55
BC55PA
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 24 October 2011
BCP55; BCX55; BC55PA
Conditions
in free air
60 V, 1 A NPN medium power transistors
[1]
[2]
[3]
[1]
[2]
[3]
[1]
[2]
[3]
[4]
[5]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2011. All rights reserved.
Max
192
125
93
250
132
93
298
151
114
154
76
16
16
20
2
.
2
2
Unit
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
.
.
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