2N5551 T/R NXP Semiconductors, 2N5551 T/R Datasheet - Page 5

• Manufacturer Part Number: 2N5551 T/R
• Description: Transistors Bipolar - BJT TRANS HV TAPE WIDE PITCH
• Manufacturer: NXP Semiconductors

Specifications of 2N5551 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 180 V
• Collector- Emitter Voltage Vceo Max: 160 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 300 MHz
• Dc Collector/base Gain Hfe Min: 80 at 1 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Continuous Collector Current: 0.3 A
• Maximum Power Dissipation: 630 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 2000
• Part # Aliases: 2N5551,116

Philips Semiconductors
PACKAGE OUTLINE
2004 Oct 28
NPN high-voltage transistors
Plastic single-ended leaded (through hole) package; 3 leads
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
UNIT
mm
OUTLINE
VERSION
SOT54
D
5.2
5.0
A
0.48
0.40
d
b
E
3
1
2
0.66
0.55
b 1
IEC
b
1
0.45
0.38
c
4.8
4.4
D
JEDEC
TO-92
1.7
1.4
d
REFERENCES
0
4.2
3.6
E
2.54
A
e
SC-43A
JEITA
scale
2.5
5
1.27
e 1
14.5
12.7
5 mm
L
L 1
L
max.
2.5
1
(1)
L
PROJECTION
EUROPEAN
2N5550; 2N5551
Product specification
ISSUE DATE
b
97-02-28
04-06-28
c
e 1
e
SOT54