2N5551 T/R NXP Semiconductors, 2N5551 T/R Datasheet - Page 7

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2N5551 T/R

Manufacturer Part Number
2N5551 T/R
Description
Transistors Bipolar - BJT TRANS HV TAPE WIDE PITCH
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 2N5551 T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
180 V
Collector- Emitter Voltage Vceo Max
160 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
6 V
Gain Bandwidth Product Ft
300 MHz
Dc Collector/base Gain Hfe Min
80 at 1 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-54
Continuous Collector Current
0.3 A
Maximum Power Dissipation
630 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
2000
Part # Aliases
2N5551,116
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
R75/04/pp
7
Date of release:
2004 Oct 28
Fax: +31 40 27 24825
Document order number:
9397 750 13548
SCA76

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