MT46H16M16LFBF-5 IT:H Micron Technology Inc, MT46H16M16LFBF-5 IT:H Datasheet - Page 11

• Manufacturer Part Number: MT46H16M16LFBF-5 IT:H
• Description: IC DDR SDRAM 256MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H16M16LFBF-5 IT:H

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 140mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Ball Assignments and Descriptions
Figure 4: 60-Ball VFBGA – 8mm x 9mm (Top View)
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Note:
A
B
C
D
E
F
G
H
J
K
1. D9 is a test pin that must be tied to V
V
V
V
V
CKE
V
V
V
A9
A6
1
DDQ
DDQ
SSQ
SSQ
SS
SS
SS
DQ15
DQ13
DQ11
UDQS
UDM
DQ9
A11
CK
A7
A4
2
DQ14
DQ12
DQ10
V
DQ8
CK#
A12
NC
A8
A5
3
SSQ
11
4
256Mb: x16, x32 Mobile LPDDR SDRAM
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
SS
Ball Assignments and Descriptions
or V
6
SSQ
in normal operations.
A10/AP
V
WE#
DQ1
DQ3
DQ5
DQ7
CS#
NC
A2
DDQ
7
LDQS
CAS#
LDM
DQ0
DQ2
DQ4
DQ6
BA0
A0
A3
8
©2008 Micron Technology, Inc. All rights reserved.
TEST
V
V
RAS#
V
V
V
BA1
V
A1
DDQ
DDQ
9
SSQ
DD
DD
DD
1