MT46H16M16LFBF-5 IT:H Micron Technology Inc, MT46H16M16LFBF-5 IT:H Datasheet - Page 77

• Manufacturer Part Number: MT46H16M16LFBF-5 IT:H
• Description: IC DDR SDRAM 256MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H16M16LFBF-5 IT:H

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 140mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 40: WRITE-to-READ – Odd Number of Data, Interrupting
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Command
Address
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
DQ
DQ
DQ
CK#
DM
DM
DM
CK
4
5
4
5
4
5
1
WRITE
Bank a,
Col b
T0
Notes:
t
t
t
DQSS
DQSS
DQSS
2
1. An interrupted burst of 4 is shown; 1 data element is written, 3 are masked.
2. A10 is LOW with the WRITE command (auto precharge is disabled).
3.
4. DQS is required at T2 and T2n (nominal case) to register DM.
5. D
D
IN
t
NOP
WTR is referenced from the first positive CK edge after the last data-in pair.
D
T1
IN
IN
b = data-in for column b; D
D
IN
T1n
NOP
T2
t
WTR
T2n
3
77
Bank a,
READ
Col b
T3
OUT
256Mb: x16, x32 Mobile LPDDR SDRAM
n = data-out for column n.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T4
NOP
CL = 3
CL = 3
CL = 3
Don’t Care
T5
NOP
©2008 Micron Technology, Inc. All rights reserved.
WRITE Operation
T5n
Transitioning Data
D
D
D
OUT
OUT
OUT
T6
NOP
D
D
D
OUT
OUT
OUT
T6n