MT46H16M16LFBF-5 IT:H Micron Technology Inc, MT46H16M16LFBF-5 IT:H Datasheet - Page 5

• Manufacturer Part Number: MT46H16M16LFBF-5 IT:H
• Description: IC DDR SDRAM 256MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H16M16LFBF-5 IT:H

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 140mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

List of Tables
Table 1: Configuration Addressing ................................................................................................................... 1
Table 2: VFBGA Ball Descriptions .................................................................................................................. 13
Table 3: Absolute Maximum Ratings .............................................................................................................. 17
Table 4: AC/DC Electrical Characteristics and Operating Conditions ............................................................... 17
Table 5: Capacitance (x16, x32) ...................................................................................................................... 19
Table 6: I
Table 7: I
Table 8: I
Table 9: Electrical Characteristics and Recommended AC Operating Conditions ............................................. 24
Table 10: Target Output Drive Characteristics (Full Strength) .......................................................................... 29
Table 11: Target Output Drive Characteristics (Three-Quarter Strength) .......................................................... 30
Table 12: Target Output Drive Characteristics (One-Half Strength) ................................................................. 31
Table 13: Truth Table – Commands ............................................................................................................... 33
Table 14: DM Operation Truth Table ............................................................................................................. 34
Table 15: Truth Table – Current State Bank n – Command to Bank n ............................................................... 40
Table 16: Truth Table – Current State Bank n – Command to Bank m .............................................................. 41
Table 17: Truth Table – CKE .......................................................................................................................... 44
Table 18: Burst Definition Table .................................................................................................................... 50
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
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6 Specifications and Conditions ................................................................................................... 22
Specifications and Conditions (x16) ............................................................................................ 20
Specifications and Conditions (x32) ............................................................................................ 21
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256Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2008 Micron Technology, Inc. All rights reserved.