PEMZ7 T/R NXP Semiconductors, PEMZ7 T/R Datasheet - Page 2

• Manufacturer Part Number: PEMZ7 T/R
• Description: Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PEMZ7 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: 15 V
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 420 MHz
• Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-666
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 300 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: PEMZ7,115

NXP Semiconductors
FEATURES
• 300 mW total power dissipation
• Very small 1.6 × 1.2 mm ultra thin package
• Self alignment during soldering due to straight leads
• Low collector capacitance
• Low V
• High current capabilities
• Improved thermal behaviour due to flat leads
• Reduced required PCB area
• Reduced pick and place costs.
APPLICATIONS
• Heavy duty battery powered equipment (automotive,
• V
• All battery driven equipment, to save battery power.
DESCRIPTION
NPN/PNP low V
package.
MARKING
2001 Nov 07
PEMZ7
telecom and audio-video) such as motor and lamp
drivers
voltage IC applications
NPN/PNP general purpose transistors
CEsat
TYPE NUMBER
CEsat
critical applications such as latest low supply
CEsat
transistor pair in a SOT666 plastic
MARKING CODE
Z7
2
PINNING
handbook, halfpage
Top view
PIN
1, 4
2, 5
6, 3
Fig.1 Simplified outline (SOT666) and symbol.
6
1
emitter
base
collector
5
2
3
4
TR1; TR2
TR1; TR2
TR1; TR2
DESCRIPTION
MAM456
TR1
Product data sheet
6
1
5
2
PEMZ7
4
3
TR2