PEMZ7 T/R NXP Semiconductors, PEMZ7 T/R Datasheet - Page 5

• Manufacturer Part Number: PEMZ7 T/R
• Description: Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PEMZ7 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: 15 V
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 420 MHz
• Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-666
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 300 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: PEMZ7,115

NXP Semiconductors
2001 Nov 07
handbook, halfpage
handbook, halfpage
NPN/PNP general purpose transistors
V CEsat
TR1 (NPN); V
(1) T
(2) T
(3) T
Fig.4
TR1 (NPN); I
(1) T
(2) T
(3) T
Fig.6
(mV)
(mV)
V BE
1200
1000
800
600
400
200
10
10
10
amb
amb
amb
amb
amb
amb
10
1
3
2
10
−1
−1
= −55 °C.
= 25 °C.
= 150 °C.
= 150 °C.
= 25 °C.
= −55 °C.
Base-emitter voltage as a function of
collector current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
C
CE
/I
B
= 2 V.
= 20.
1
1
10
10
(1)
(2)
(3)
(1)
(2)
(3)
10
10
2
2
I C (mA)
I C (mA)
MHC018
MLD673
10
10
3
3
5
handbook, halfpage
handbook, halfpage
V BEsat
(mV)
TR1 (NPN); I
(1) T
(2) T
(3) T
Fig.5
TR2 (PNP); V
(1) T
(2) T
(3) T
Fig.7
h FE
1200
1000
800
600
400
200
600
500
400
300
200
100
−10
amb
amb
amb
amb
amb
amb
10
0
−1
−1
= 150 °C.
= 25 °C.
= −55 °C.
= 150 °C.
= 25 °C.
= −55 °C.
Base-emitter saturation voltage as a
function of collector current; typical values.
DC current gain as a function of collector
current; typical values.
C
CE
/I
B
= −2 V.
= 20.
−1
1
(1)
(2)
(3)
(1)
(2)
(3)
−10
10
−10
10
Product data sheet
2
2
I C (mA)
I C (mA)
MHC017
MHC019
PEMZ7
−10
10
3
3