MZ0912B50Y TRAY NXP Semiconductors, MZ0912B50Y TRAY Datasheet - Page 3

• Manufacturer Part Number: MZ0912B50Y TRAY
• Description: Transistors Bipolar - BJT BULKTR TNS-MICP
• Manufacturer: NXP Semiconductors

Specifications of MZ0912B50Y TRAY

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 65 V
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 3 A
• Gain Bandwidth Product Ft: 1.215 GHz
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-423A
• Maximum Power Dissipation: 150000 mW
• Factory Pack Quantity: 4
• Part # Aliases: MZ0912B50Y,114

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Up to 0.2 mm from ceramic.
1997 Feb 18
handbook, halfpage
V
V
V
V
I
P
T
T
T
C
SYMBOL
stg
j
sld
CBO
CEO
CES
EBO
tot
NPN microwave power transistor
t
p
= 10 s;
P tot
(W)
180
120
60
0
50
= 10%; P
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation (peak power)
storage temperature
operating junction temperature
soldering temperature
Fig.2 Power derating curve.
0
tot max
= 150 W.
PARAMETER
100
T mb ( C)
MGL051
200
open emitter
open base
R
open collector
t
T
t
p
mb
BE
10 s; note 1
10 s;
= 75 C; t
= 0
3
CONDITIONS
p
10%
10 s;
10%
65
MIN.
MZ0912B50Y
Product specification
65
20
60
3
3
150
+200
200
235
MAX.
V
V
V
V
A
W
C
C
C
UNIT