MZ0912B50Y TRAY NXP Semiconductors, MZ0912B50Y TRAY Datasheet - Page 6

• Manufacturer Part Number: MZ0912B50Y TRAY
• Description: Transistors Bipolar - BJT BULKTR TNS-MICP
• Manufacturer: NXP Semiconductors

Specifications of MZ0912B50Y TRAY

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 65 V
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 3 A
• Gain Bandwidth Product Ft: 1.215 GHz
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-423A
• Maximum Power Dissipation: 150000 mW
• Factory Pack Quantity: 4
• Part # Aliases: MZ0912B50Y,114

Philips Semiconductors
1997 Feb 18
handbook, halfpage
handbook, full pagewidth
NPN microwave power transistor
V
Fig.4
V
CC
CC
(W)
P L
= 50 V; t
= 50 V; Z
70
60
50
0.95
Load power as a function of frequency;
(In broadband test circuit as shown in
Fig.3).
Fig.6 Optimum load impedance as a function of frequency, associated with input impedance.
p
o
= 10 s;
= 10 ; P
1.05
L
= 10%.
= 50 W.
j
j
0
0.2
0.2
1.15
1.215 GHz
f (GHz)
0.5
0.5
0.2
MGL052
1.25
0.960 GHz
0.5
1
6
1
1
handbook, halfpage
Fig.5
(%)
2
C
50
45
40
0.95
Collector efficiency as a function of
frequency; (In broadband test circuit as
shown in Fig.3).
5
2
2
10
MGL049
1.05
5
5
10
10
1.15
MZ0912B50Y
Product specification
f (GHz)
MGL053
1.25