BST39 T/R NXP Semiconductors, BST39 T/R Datasheet - Page 4

• Manufacturer Part Number: BST39 T/R
• Description: Transistors Bipolar - BJT TRANS HV TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BST39 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 400 V
• Collector- Emitter Voltage Vceo Max: 350 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 70 MHz
• Dc Collector/base Gain Hfe Min: 40 at 20 mA at 10 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 1300 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 1000
• Part # Aliases: BST39,115

NXP Semiconductors
PACKAGE OUTLINE
2004 Dec 14
NPN high-voltage transistors
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT89
1.6
1.4
A
b p1
0.48
0.35
0.53
0.40
b p2
w
IEC
M
b p3
1.8
1.4
0.44
0.23
1
c
b
e
p1
1
TO-243
JEDEC
4.6
4.4
D
0
b
D
e
p3
REFERENCES
2
2.6
2.4
E
b
p2
3.0
e
SC-62
scale
JEITA
4
2
3
1.5
e 1
L
B
A
E
p
4.25
3.75
H E
1.2
0.8
4 mm
L p
0.13
w
PROJECTION
EUROPEAN
c
H
E
BST39; BST40
Product data sheet
ISSUE DATE
04-08-03
06-03-16
SOT89