PN2907A T/R NXP Semiconductors, PN2907A T/R Datasheet - Page 2

• Manufacturer Part Number: PN2907A T/R
• Description: Transistors Bipolar - BJT PNP SW 600MA 60V
• Manufacturer: NXP Semiconductors

Specifications of PN2907A T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.6 A
• Gain Bandwidth Product Ft: 200 MHz
• Dc Collector/base Gain Hfe Min: 75 at 0.1 mA at 10 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Dc Current Gain Hfe Max: 75 at 0.1 mA at 10 V
• Maximum Power Dissipation: 625 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 2000
• Part # Aliases: PN2907A,116

NXP Semiconductors
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 60 V).
APPLICATIONS
• Switching and linear amplification.
DESCRIPTION
PNP switching transistor in a TO-92; SOT54 plastic
package. NPN complement: PN2222A.
QUICK REFERENCE DATA
ORDERING INFORMATION
2004 Oct 11
V
V
I
P
h
f
t
PN2907A
SYMBOL
C
T
off
TYPE NUMBER
FE
CBO
CEO
tot
PNP switching transistor
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
turn-off time
PARAMETER
SC-43A
NAME
plastic single-ended leaded (through hole) package; 3 leads
open emitter
open base
T
V
V
I
Con
amb
CE
CE
= −150 mA; I
= −10 V; I
= −20 V; I
≤ 25 °C
C
C
= −150 mA
= −50 mA; f = 100 MHz
CONDITIONS
Bon
2
= −15 mA; I
PINNING
handbook, halfpage
DESCRIPTION
PACKAGE
Fig.1
PIN
1
2
3
Simplified outline (TO-92; SOT54)
and symbol.
Boff
1
2
3
= 15 mA
collector
base
emitter
−
−
−
−
100
200
−
DESCRIPTION
MIN.
MAM280
Product data sheet
−60
−60
−600
500
300
−
365
MAX.
PN2907A
2
VERSION
SOT54
V
V
mA
mW
MHz
ns
1
3
UNIT