PN2907A T/R NXP Semiconductors, PN2907A T/R Datasheet - Page 5

• Manufacturer Part Number: PN2907A T/R
• Description: Transistors Bipolar - BJT PNP SW 600MA 60V
• Manufacturer: NXP Semiconductors

Specifications of PN2907A T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.6 A
• Gain Bandwidth Product Ft: 200 MHz
• Dc Collector/base Gain Hfe Min: 75 at 0.1 mA at 10 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Dc Current Gain Hfe Max: 75 at 0.1 mA at 10 V
• Maximum Power Dissipation: 625 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 2000
• Part # Aliases: PN2907A,116

NXP Semiconductors
PACKAGE OUTLINE
2004 Oct 11
PNP switching transistor
Plastic single-ended leaded (through hole) package; 3 leads
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
UNIT
mm
VERSION
OUTLINE
SOT54
D
5.2
5.0
A
0.48
0.40
d
b
E
3
1
2
0.66
0.55
b 1
IEC
b
1
0.45
0.38
c
4.8
4.4
D
JEDEC
TO-92
1.7
1.4
d
REFERENCES
0
4.2
3.6
E
2.54
A
e
SC-43A
JEITA
scale
2.5
5
1.27
e 1
14.5
12.7
5 mm
L
L 1
L
max.
2.5
1
(1)
L
PROJECTION
EUROPEAN
Product data sheet
ISSUE DATE
PN2907A
b
04-06-28
04-11-16
c
e 1
e
SOT54