PBSS5350X /T3 NXP Semiconductors, PBSS5350X /T3 Datasheet - Page 12

• Manufacturer Part Number: PBSS5350X /T3
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of PBSS5350X /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 200 at 0.1 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Continuous Collector Current: 3 A
• Maximum Power Dissipation: 1600 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: PBSS5350X,135

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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
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R75/03/pp12
Date of release: 2004 Nov 04
Document order number: 9397 750 13889