PBSS5350X /T3 NXP Semiconductors, PBSS5350X /T3 Datasheet - Page 8

• Manufacturer Part Number: PBSS5350X /T3
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of PBSS5350X /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 200 at 0.1 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Continuous Collector Current: 3 A
• Maximum Power Dissipation: 1600 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: PBSS5350X,135

NXP Semiconductors
2004 Nov 04
handbook, halfpage
handbook, halfpage
50 V, 3 A
PNP low V
V CEsat
V
(1) T
(2) T
(3) T
Fig.6
I
(1) T
(2) T
(3) T
Fig.8
C
CE
(V)
−10
−10
−10
/I
h FE
B
600
400
200
= −2 V.
= 20.
−1
−1
−2
−3
−10
−10
amb
amb
amb
amb
amb
amb
0
−1
−1
= 100 °C.
= 25 °C.
= −55 °C.
= 100 °C.
= 25 °C.
= −55 °C.
DC current gain as a function of collector
current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
−1
−1
CEsat
(2)
−10
−10
(1)
(3)
(BISS) transistor
−10
−10
(1)
(2)
(3)
2
2
−10
−10
I C (mA)
I C (mA)
3
3
MLE171
MLE173
−10
−10
4
4
8
handbook, halfpage
handbook, halfpage
V CEsat
V
(1) T
(2) T
(3) T
Fig.7
T
(1) I
(2) I
(3) I
Fig.9
CE
amb
(V)
−10
−10
−10
V BE
−1.2
−0.8
−0.4
(V)
= −2 V.
C
C
C
−1
= 25 °C.
−1
−2
−3
−10
amb
amb
amb
−10
/I
/I
/I
0
B
B
B
= 100.
= 50.
= 10.
−1
= −55 °C.
= 25 °C.
= 100 °C.
−1
Base-emitter voltage as a function of
collector current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
−1
−1
−10
−10
(1)
(2)
(3)
−10
−10
(1)
(2)
(3)
2
2
PBSS5350X
Product data sheet
−10
−10
I C (mA)
3
I C (mA)
3
MLE170
MLE174
−10
−10
4
4