BCV61B T/R NXP Semiconductors, BCV61B T/R Datasheet - Page 10

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BCV61B T/R

Manufacturer Part Number
BCV61B T/R
Description
Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCV61B T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Dual
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
30 V
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
6 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
100 at 100 uA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-143
Continuous Collector Current
0.1 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
BCV61B,215
NXP Semiconductors
11. Soldering
BCV61_4
Product data sheet
Fig 17. Reflow soldering footprint SOT143B
Fig 18. Wave soldering footprint SOT143B
4.6
(3×)
0.7
0.7
2.575
(3×)
0.6
0.6
0.75
(3×)
(3×)
0.6
0.5
0.9
Rev. 04 — 18 December 2009
1
3.25
1.9
4.45
2.2
1.2
0.95
(3×)
1.2
1
2
NPN general-purpose double transistors
3
1.425
1.425
(3×)
preferred transport direction during soldering
Dimensions in mm
Dimensions in mm
© NXP B.V. 2009. All rights reserved.
solder lands
solder resist
solder paste
occupied area
BCV61
solder lands
solder resist
occupied area
sot143b_fr
sot143b_fw
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