BCV61B T/R NXP Semiconductors, BCV61B T/R Datasheet - Page 4

• Manufacturer Part Number: BCV61B T/R
• Description: Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BCV61B T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 100 at 100 uA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-143
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BCV61B,215

NXP Semiconductors
BCV61_4
Product data sheet
Table 7.
T
[1]
[2]
[3]
Symbol Parameter
Transistor TR2
V
h
Transistors TR1 and TR2
I
I
C1
E2
j
FE
EBS
= 25
/I
E2
V
V
Device, without emitter resistors, mounted on an FR4 PCB.
BEsat
BE
°
C unless otherwise specified.
decreases by about 2 mV/K with increasing temperature.
decreases by about 1.7 mV/K with increasing temperature.
emitter-base voltage
DC current gain
current matching
emitter current 2
Characteristics
BCV61
BCV61A
BCV61B
BCV61C
Rev. 04 — 18 December 2009
…continued
V
I
Conditions
I
V
I
V
I
V
V
E
E
C
E2
CB
CB
CE
CE1
CE1
T
T
= −250 mA
= −10 μA
= 2 mA
= −0.5 mA;
amb
amb
= 0 V;
= 0 V;
= 5 V;
NPN general-purpose double transistors
= 5 V
= 5 V
≤ 25 °C
≤ 150 °C
[3]
Min
-
−400
110
110
200
420
0.7
0.7
-
Typ
-
-
-
-
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
BCV61
Max
−1.8
-
800
220
450
800
1.3
1.3
−5
Unit
V
mV
mA
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