BSP19 T/R NXP Semiconductors, BSP19 T/R Datasheet - Page 3

• Manufacturer Part Number: BSP19 T/R
• Description: Transistors Bipolar - BJT TRANS HV TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BSP19 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 400 V
• Collector- Emitter Voltage Vceo Max: 350 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Dc Collector/base Gain Hfe Min: 40 at 20 mA at 10 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 1200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 1000
• Part # Aliases: BSP19,115

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
CHARACTERISTICS
T
1999 Jun 01
R
R
I
I
h
V
C
f
SYMBOL
j
CBO
EBO
T
SYMBOL
FE
= 25 °C unless otherwise specified.
CEsat
NPN high-voltage transistors
th j-a
th j-s
c
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
collector capacitance
transition frequency
PARAMETER
PARAMETER
I
I
V
I
I
V
E
C
C
E
CE
CE
= 0; V
= i
= 0; V
= 50 mA; I
= 10 V; I
= 10 V; I
e
= 0; V
3
CE
EB
= 300 V
= 5 V
CONDITIONS
CB
B
C
C
= 4 mA
= 20 mA
= 10 mA; f = 100 MHz 70
note 1
= 10 V; f = 1 MHz
CONDITIONS
−
−
40
−
−
MIN.
BSP19; BSP20
VALUE
104
23
Product data sheet
20
100
−
0.5
2.5
−
MAX.
2
.
UNIT
K/W
K/W
nA
nA
V
pF
MHz
UNIT