FJA4310YTU Fairchild Semiconductor, FJA4310YTU Datasheet - Page 2

• Manufacturer Part Number: FJA4310YTU
• Description: Transistors Bipolar - BJT NPN Si Transistor Epitaxial
• Manufacturer: Fairchild Semiconductor

Specifications of FJA4310YTU

• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 200 V
• Collector- Emitter Voltage Vceo Max: 140 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 10 A
• Gain Bandwidth Product Ft: 30 MHz
• Dc Collector/base Gain Hfe Min: 90
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-3P
• Maximum Power Dissipation: 100000 mW
• Minimum Operating Temperature: - 55 C

FJA4310 Rev. C1
© 2008 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 3. V
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
10
8
6
4
2
0
9
8
7
6
5
4
3
2
1
0
Figure 5. Base-Emitter On Voltage
0.0
0.0
0
Figure 1. Static Characterstic
V
CE
I
B
= 4 V
= 400mA
V
CE
0.4
Ta = 125
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
BE
1
(sat) vs. I
[V], Base-Emitter On VOLTAGE
Ta = 25
I
B
o
0.5
C
[A], BASE CURRENT
I
C
= - 5A
0.8
o
C
I
B
= 300mA
B
2
Characteristics
Ta = - 25
1.2
I
B
1.0
= 250mA
o
C
I
B
3
= 200mA
I
1.6
B
= 150mA
I
I
B
C
I
I
= - 10A
B
B
= 100mA
= 50mA
= 20mA
2.0
1.5
4
2
Figure 4. Collector-Emitter Saturation Voltage
Figure 6. Forward Bias Safe Operating Area
0.01
0.1
1000
0.1
10
100
1
0.01
1
10
0.1
I
I
C
C
I
T
Single Pulse
C
(Pulse)
(DC)
C
Ta = 125
Figure 2. DC current Gain
= 10 I
= 25
V
Ta = - 25
CE
o
B
C
[V], COLLECTOR-EMITTER VOLTAGE
o
I
C
C
I
C
[A], COLLECTOR CURRENT
10
[A], COLLECTOR CURRENT
o
C
0.1
Ta = 25
1
Ta = 25
o
C
t=100ms
o
C
Ta = 125
t=10ms
1
Ta = - 25
o
C
100
o
V
C
CE
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10
= 4 V
10