FJA4310YTU Fairchild Semiconductor, FJA4310YTU Datasheet - Page 3

• Manufacturer Part Number: FJA4310YTU
• Description: Transistors Bipolar - BJT NPN Si Transistor Epitaxial
• Manufacturer: Fairchild Semiconductor

Specifications of FJA4310YTU

• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 200 V
• Collector- Emitter Voltage Vceo Max: 140 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 10 A
• Gain Bandwidth Product Ft: 30 MHz
• Dc Collector/base Gain Hfe Min: 90
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-3P
• Maximum Power Dissipation: 100000 mW
• Minimum Operating Temperature: - 55 C

FJA4310 Rev. C1
© 2008 Fairchild Semiconductor Corporation
Typical Characteristics
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Figure 7. Power Derating
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