FJA4310YTU Fairchild Semiconductor, FJA4310YTU Datasheet - Page 3
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FJA4310YTU
Manufacturer Part Number
FJA4310YTU
Description
Transistors Bipolar - BJT NPN Si Transistor Epitaxial
Manufacturer
Fairchild Semiconductor
Datasheet
1.FJA4310YTU.pdf
(5 pages)
Specifications of FJA4310YTU
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
200 V
Collector- Emitter Voltage Vceo Max
140 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
10 A
Gain Bandwidth Product Ft
30 MHz
Dc Collector/base Gain Hfe Min
90
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-3P
Maximum Power Dissipation
100000 mW
Minimum Operating Temperature
- 55 C
FJA4310 Rev. C1
© 2008 Fairchild Semiconductor Corporation
Typical Characteristics
140
120
100
80
60
40
20
0
0
Figure 7. Power Derating
25
T
50
C
[
o
C], CASE TEMPERATURE
75
100
125
(Continued)
150
175
3
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