FJA4310YTU Fairchild Semiconductor, FJA4310YTU Datasheet - Page 4

• Manufacturer Part Number: FJA4310YTU
• Description: Transistors Bipolar - BJT NPN Si Transistor Epitaxial
• Manufacturer: Fairchild Semiconductor

Specifications of FJA4310YTU

• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 200 V
• Collector- Emitter Voltage Vceo Max: 140 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 10 A
• Gain Bandwidth Product Ft: 30 MHz
• Dc Collector/base Gain Hfe Min: 90
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-3P
• Maximum Power Dissipation: 100000 mW
• Minimum Operating Temperature: - 55 C

FJA4310 Rev. C1
© 2008 Fairchild Semiconductor Corporation
Package Dimension (TO-3P)
NOTES:
A) THIS PACKAGE CONFORMS TO EIAJ
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONING AND TOLERANCING PER
D) DIMENSIONS ARE EXCLUSIVE OF BURRS,
E) DRAWING FILE NAME: TO3P03AREV2.
0.55
SC-65 PACKAGING STANDARD.
MOLD FLASH, AND TIE BAR EXTRUSIONS.
ASME14.5 1973.
(R0.50)
(1.85)
1.80
1.20
2.20
0.80
3.20
2.80
1
5.45
15.80
15.40
5.45
4
3
3.70
3.30
5.20
4.80
19.70
19.70
20.10
20.30
(R0.50)
18.90
18.50
5.00
4.60
0.75
0.55
1.65
1.45
2.60
2.20
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