MT47H32M8BP-5E:B TR Micron Technology Inc, MT47H32M8BP-5E:B TR Datasheet - Page 48

• Manufacturer Part Number: MT47H32M8BP-5E:B TR
• Description: IC DDR2 SDRAM 256MBIT 5NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H32M8BP-5E:B TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 256M (32M x 8)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power and Ground Clamp Characteristics
Table 24: Input Clamp Characteristics
Figure 19: Input Clamp Characteristics
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
Voltage Across Clamp (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
Power and ground clamps are provided on the following input-only balls: Address balls,
bank address balls, CS#, RAS#, CAS#, WE#, ODT, and CKE.
25
20
15
10
5
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
Minimum Power Clamp Current
Voltage Across Clamp (V)
(mA)
48
11.0
13.5
16.0
18.2
21.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.1
1.0
2.5
4.7
6.8
9.1
Power and Ground Clamp Characteristics
Micron Technology, Inc. reserves the right to change products or specifications without notice.
256Mb: x4, x8, x16 DDR2 SDRAM
Minimum Ground Clamp Current
©2003 Micron Technology, Inc. All rights reserved.
(mA)
11.0
13.5
16.0
18.2
21.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.1
1.0
2.5
4.7
6.8
9.1