MT47H32M8BP-5E:B TR Micron Technology Inc, MT47H32M8BP-5E:B TR Datasheet - Page 55

• Manufacturer Part Number: MT47H32M8BP-5E:B TR
• Description: IC DDR2 SDRAM 256MBIT 5NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H32M8BP-5E:B TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 256M (32M x 8)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 24: Nominal Slew Rate for
Figure 25: Tangent Line for
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
V
V
V
V
Hold slew rate
rising signal
IH(AC)min
IH(DC)min
IL(DC)max
IL(AC)max
V
V
V
REF(DC)
V
V
V
IH(AC)min
IH(DC)min
IL(DC)max
IL(AC)max
V
CK#
DDQ
REF(DC)
V
CK
V
t
SS
CK#
IH
DDQ
V
CK
SS
=
DC to V
DC to V
Tangent line (V
region
t
region
IH
REF
REF
REF[DC]
Nominal
slew rate
ΔTR
t IS
t IS
Tangent
line
- V
IL[DC]max
t IH
t IH
55
)
ΔTR
Hold slew rate
falling signal
ΔTR
Nominal
line
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=
Tangent line (V
t IS
256Mb: x4, x8, x16 DDR2 SDRAM
Nominal
slew rate
Tangent
DC to V
DC to V
t IS
line
region
region
t IH
REF
REF
t IH
IH[DC]min
ΔTF
ΔTF
Nominal
Input Slew Rate Derating
line
ΔTF
- V
REF[DC]
)
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