IS42S16160D-7BLI-TR ISSI, Integrated Silicon Solution Inc, IS42S16160D-7BLI-TR Datasheet - Page 15

IC SDRAM 256MBIT 143MHZ 54BGA

IS42S16160D-7BLI-TR

Manufacturer Part Number
IS42S16160D-7BLI-TR
Description
IC SDRAM 256MBIT 143MHZ 54BGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr

Specifications of IS42S16160D-7BLI-TR

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (16Mx16)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
54-BGA
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
6.5/5.4ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
130mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS42S16160D-7BLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
DC RECOMMENDED OPERATING CONDITIONS
Symbol
IS42S83200D, IS42S16160D
ABSOLUTE MAXIMUM RATINGS
Note:
1. V
2. V
3. All voltages are referenced to Vss.
CAPACITANCE CHARACTERISTICS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
2. All voltages are referenced to Vss.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00D
12/12/07
Symbol
V
V
V
V
P
I
T
T
Symbol
C
C
CI/O
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
cs
opr
out
ih
il
stg
dd max
ddq max
in
d max
in1
in2
V
V
V
(undershoot): V
V
(overshoot): V
ddq
ih
il
dd
(2)
(1)
Parameter
Input Capacitance: CLK
Input Capacitance:All other input pins
Data Input/Output Capacitance: DQS
Parameter
Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
ih
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
output Shorted Current
operating Temperature
Storage Temperature
ih
(max) = V
(min) = -2V (
ddq
pulse width
+2V (
pulse width
(1)
< 3ns).
(At T
< 3ns).
a
= 0 to +25°C, V
Com.
Ind.
Min.
-0.3
3.0
3.0
2.0
Min.
2.5
2.5
4.0
–1.0 to V
–0.5 to V
dd
Typ.
–0.5 to +4.6
–0.5 to +4.6
–65 to +150
3.3
3.3
–40 to +85
0 to +70
= V
Rating
50
1
ddq
ddq
dd
+ 0.5
= 3.3 ± 0.3V)
+ 0.5
V
ddq
Max.
+0.8
3.6
3.6
Max.
3.5
3.8
6.0
+ 0.3
Unit
mA
°C
°C
W
V
V
V
V
Unit
Unit
pF
pF
pF
V
V
V
V
15

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