PESD24VS4UD T/R NXP Semiconductors, PESD24VS4UD T/R Datasheet - Page 4

• Manufacturer Part Number: PESD24VS4UD T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PESD24VS4UD T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Breakdown Voltage: 25.5 V
• Clamping Voltage: 52 V
• Operating Voltage: 24 V
• Peak Surge Current: 4 A
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.7(Max) mm W x 3.1(Max) mm L
• Package / Case: TSOP-6
• Peak Pulse Power Dissipation: 200 W
• Factory Pack Quantity: 3000
• Part # Aliases: PESD24VS4UD,115

NXP Semiconductors
6. Characteristics
PESDXS4UD_SER_2
Product data sheet
Fig 1.
(%)
I
PP
120
80
40
0
0
8/20 s pulse waveform according to
IEC 61000-4-5
10
100 % I
Table 8.
T
Symbol
Per diode
V
I
V
RM
amb
e
RWM
BR
PP
t
; 8 s
20
= 25 C unless otherwise specified
50 % I
Parameter
reverse standoff voltage
reverse leakage current
breakdown voltage
Characteristics
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
PP
30
; 20 s
001aaa630
t ( s)
Rev. 02 — 21 August 2009
40
Quadruple ESD protection diode arrays in a SOT457 package
Fig 2.
Conditions
V
V
V
V
V
I
R
RWM
RWM
RWM
RWM
RWM
= 1 mA
100 %
10 %
90 %
= 3.3 V
= 5 V
= 12 V
= 15 V
= 24 V
ESD pulse waveform according to
IEC 61000-4-2
I
PP
PESDxS4UD series
t
r
30 ns
0.7 ns to 1 ns
60 ns
Min
-
-
-
-
-
-
-
-
-
-
5.3
6.4
12.5
15.5
25.5
Typ
-
-
-
-
-
300
80
0.05
0.05
0.05
5.6
6.8
14.5
18
27
© NXP B.V. 2009. All rights reserved.
001aaa631
Max
3.3
5
12
15
24
800
200
15
15
15
5.9
7.2
16
20.5
29
t
Unit
V
V
V
V
V
nA
nA
nA
nA
nA
V
V
V
V
V
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