PESD24VS4UD T/R NXP Semiconductors, PESD24VS4UD T/R Datasheet - Page 5

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PESD24VS4UD T/R

Manufacturer Part Number
PESD24VS4UD T/R
Description
TVS Diode Arrays DIODE ARRAY ESD TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PESD24VS4UD T/R

Product Category
TVS Diode Arrays
Rohs
yes
Polarity
Unidirectional
Breakdown Voltage
25.5 V
Clamping Voltage
52 V
Operating Voltage
24 V
Peak Surge Current
4 A
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Dimensions
1.7(Max) mm W x 3.1(Max) mm L
Package / Case
TSOP-6
Peak Pulse Power Dissipation
200 W
Factory Pack Quantity
3000
Part # Aliases
PESD24VS4UD,115
NXP Semiconductors
PESDXS4UD_SER_2
Product data sheet
Fig 3.
P
(W)
PP
10
10
10
10
1
4
3
2
1
T
Peak pulse power as a function of exponential
pulse duration; typical values
amb
= 25 C
10
Table 8.
T
[1]
[2]
Symbol
C
V
r
amb
dif
CL
d
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1, 3, 4 or 6 to 2 or 5
10
= 25 C unless otherwise specified
2
Parameter
diode capacitance
clamping voltage
differential resistance
Characteristics
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
10
3
006aaa698
t
p
( s)
10
Rev. 02 — 21 August 2009
Quadruple ESD protection diode arrays in a SOT457 package
4
…continued
Fig 4.
P
Conditions
f = 1 MHz; V
I
I
I
I
I
I
I
I
I
I
I
PP(25 C)
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
R
P
= 5 mA
PP
= 1 A
= 20 A
= 1 A
= 20 A
= 1 A
= 10 A
= 1 A
= 6 A
= 1 A
= 4 A
1.2
0.8
0.4
0
0
Relative variation of peak pulse power as a
function of junction temperature; typical
values
R
PESDxS4UD series
= 0 V
50
[1][2]
100
-
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
150
Typ
215
165
73
60
45
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
001aaa633
T
j
( C)
Max
300
220
100
90
70
8
12
8
13
17
24
22
33
33
52
25
200
Unit
pF
pF
pF
pF
pF
V
V
V
V
V
V
V
V
V
V
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