IS42S16160D-75EBLI ISSI, Integrated Silicon Solution Inc, IS42S16160D-75EBLI Datasheet - Page 18

• Manufacturer Part Number: IS42S16160D-75EBLI
• Description: IC SDRAM 256MBIT 133MHZ 54BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS42S16160D-75EBLI

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 54-BGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S83200D, IS42S16160D
IS45S83200D, IS45S16160D
AC ELECTRICAL CHARACTERISTICS
Notes:
1. The power-on sequence must be executed before starting memory operation.
2. measured with t
3. The reference level is 1.4V when measuring input signal timing. Rise and fall times are measured between V
4. Self-Refresh Mode is not supported for A2 grade with T
18
Symbol Parameter
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
ck3
ck2
ac3
ac2
chi
cl
oh3
oh2
lz
hz
ds
dh
as
ah
cks
ckh
cs
ch
rc
ras
rp
rcd
rrd
dpl
dal
mrd
dde
xsr
t
ref
(max).
Clock Cycle Time
Access Time From CLK
CLK HIGH Level Width
CLK LOW Level Width
Output Data Hold Time
Output LOW Impedance Time
Output HIGH Impedance Time
Input Data Setup Time
Input Data Hold Time
Address Setup Time
Address Hold Time
CKE Setup Time
CKE Hold Time
Command Setup Time (CS, RAS, CAS, WE, DQM)
Command Hold Time (CS, RAS, CAS, WE, DQM)
Command Period (REF to REF / ACT to ACT)
Command Period (ACT to PRE)
Command Period (PRE to ACT)
Active Command To Read / Write Command Delay Time
Command Period (ACT [0] to ACT[1])
Input Data To Precharge
Command Delay time
Input Data To Active / Refresh
Command Delay time (During Auto-Precharge)
Mode Register Program Time
Power Down Exit Setup Time
exit Self-Refresh to Active Time
Transition Time
Refresh Cycle Time (8192)
t
= 1 ns. If clock rising time is longer than 1ns, (t
(2)
(2)
(2)
(2)
T
(2)
a
(2)
≤ 70
T
o
C Com., Ind., A1, A2
a
≤ 85
(4)
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
o
C Ind., A1, A2
T
a
> 85
o
C A2
(1,2,3)
(2)
(2)
a
> +85
o
C.
r
Min.
2.5
2.5
2.7
2.7
2.7
1.5
0.8
1.5
0.8
1.5
0.8
1.5
0.8
0.3
10
—
—
60
42
18
18
12
12
12
66
—
—
—
30
/2 - 0.5) ns should be added to the parameter.
6
0
6
-6
Integrated Silicon Solution, Inc. — www.issi.com
Max.
100K
5.4
6.5
5.4
1.2
64
64
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Min.
67.5
2.5
2.5
2.7
2.7
2.7
1.5
0.8
1.5
0.8
1.5
0.8
1.5
0.8
0.3
10
45
20
20
14
14
14
75
—
—
35
—
—
—
7
0
7
-7
Max.
100K
5.4
6.5
5.4
1.2
—
—
—
—
—
—
64
64
16
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Min.
67.5
7.5
2.5
2.5
2.7
2.7
1.5
0.8
1.5
0.8
1.5
0.8
1.5
0.8
7.5
0.3
—
—
—
—
45
15
15
15
15
30
15
75
—
—
—
0
-75E
ih
(min.) and V
100K
Max.
5.5
5.4
1.2
64
64
16
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
04/05/2010
il
Units
Rev. D
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns