IS42S16160D-75EBLI ISSI, Integrated Silicon Solution Inc, IS42S16160D-75EBLI Datasheet - Page 30

• Manufacturer Part Number: IS42S16160D-75EBLI
• Description: IC SDRAM 256MBIT 133MHZ 54BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS42S16160D-75EBLI

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 54-BGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

a longer burst. Following the PRECHARGE command, a
subsequent command to the same bank cannot be issued
until t
and address buses be available at the appropriate time to
issue the command; the advantage of the PRECHARGE
possible CAS latency; data element n + 3 is the last desired
data element of a longer burst.
IS42S83200D, IS42S16160D
IS45S83200D, IS45S16160D
diagram for each possible CAS latency; data element n +
3 is either the last of a burst of four or the last desired of
hidden during the access of the last data element(s).
In the case of a fixed-length burst being executed to
completion, a PRECHARGE command issued at the
optimum time (as described above) provides the same
operation that would result from the same fixed-length
burst with auto precharge. The disadvantage of the PRE-
CHARGE command is that it requires that the command
command is that it can be used to truncate fixed-length
or full-page bursts.
Full-page READ bursts can be truncated with the BURST
TERMINATE command, and fixed-length READ bursts
may be truncated with a BURST TERMINATE command,
provided that auto precharge was not activated.The BURST
TERMINATE command should be issued x cycles before
the clock edge at which the last desired data element is
valid, where x equals the CAS latency minus one. This is
shown in the READ Burst Termination diagram for each
30
rp
is met. Note that part of the row precharge time is
Integrated Silicon Solution, Inc. — www.issi.com
04/05/2010
Rev. D