M45PE10-VMN6P NUMONYX, M45PE10-VMN6P Datasheet - Page 37

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M45PE10-VMN6P

Manufacturer Part Number
M45PE10-VMN6P
Description
IC FLASH 1MBIT 75MHZ 8SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M45PE10-VMN6P

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
1M (128K x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Clock Frequency
75MHz
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
SO
No. Of Pins
8
Base Number
45
Frequency
75MHz
Ic Generic Number
45PE10
Memory Configuration
128K X 8
Interface Type
Serial, SPI
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M45PE10-VMN6P
Manufacturer:
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Part Number:
M45PE10-VMN6P
Manufacturer:
ST
Quantity:
20 000
M45PE10
Table 12.
1. t
2. Value guaranteed by characterization, not 100% tested in production.
3. When using PP and PW instructions to update consecutive bytes, optimized timings are obtained with one
Symbol
t
t
SHQZ
RLRH
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RDP
t
t
t
t
DVCH
CHDX
CHSH
SHCH
SHRH
WHSL
SHWL
PW
CH
SLCH
CHSL
SHSL
CLQV
CLQX
RHSL
DP
CL
PP
t
t
sequence including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤ 256).
f
f
PE
SE
CH
C
R
(1)
(2)
(3)
(1)
(3)
(2)
(2)
(2)
+ t
CL
must be greater than or equal to 1/ f
t
t
t
t
t
t
t
Alt.
t
t
t
CLH
CSS
DSU
CSH
RST
REC
CLL
DIS
f
DH
HO
t
C
V
AC characteristics (25 MHz operation)
Clock frequency for the following
instructions: FAST_READ, PW, PP, PE,
SE, DP, RDP, WREN, WRDI, RDSR
Clock frequency for Read instructions
Clock High time
Clock Low time
Clock slew rate
S active setup time (relative to C)
S not active hold time (relative to C)
Data in setup time
Data in hold time
S active hold time (relative to C)
S not active setup time (relative to C)
S deselect time
Output disable time
Clock Low to Output valid
Output hold time
Reset pulse width
Reset recovery time
Chip should have been deselected
before Reset is de-asserted
Write protect setup time
Write protect hold time
S to deep power-down
S High to standby power mode
Page write cycle time (256 bytes)
Page write cycle time (n bytes)
Page program cycle time (256 bytes)
Page program cycle time (n bytes)
Page erase cycle time
Sector erase cycle time
Test conditions specified in
Parameter
(2)
(peak to peak)
C
(max).
Table 8
Min.
D.C.
D.C.
0.03
200
100
and
18
18
10
10
10
10
10
10
50
5
5
0
Table 9
n*0.8/256
n*0.8/256
10.2+
Typ.
0.4+
DC and AC parameters
1.2
11
10
1
Max.
25
20
15
15
30
25
20
3
3
5
5
MHz
MHz
V/ns
Unit
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
ns
µs
µs
37/47
s

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