M25P80-VMW6TG NUMONYX, M25P80-VMW6TG Datasheet - Page 42

• Manufacturer Part Number: M25P80-VMW6TG
• Description: IC FLASH 8MBIT 75MHZ 8SOIC
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P80-VMW6TG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 8M (1M x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Package: 8SO W
• Cell Type: NOR
• Density: 8 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3.3 V
• Sector Size: 64KByte x 16
• Timing Type: Synchronous
• Interface Type: Serial-SPI
• Access Time (max): 8ns
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: SOIC W
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1M
• Supply Current: 8mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25P80-VMW6TG; M25P80-VMW6TGTR

Table 15.
1. Typical values given for T
2. t
3. Value guaranteed by characterization, not 100% tested in production.
4. Expressed as a slew-rate.
5. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
6. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are obtained with one
7. int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
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Symbol
t
PP
t
t
sequence including all the bytes versus several sequences of only a few bytes. (1 ≤ n ≤ 256)
t
SE
BE
CH
W
(6)
+ t
CL
must be greater than or equal to 1/ f
Alt.
AC characteristics (75 MHz operation) (continued)
Write Status Register cycle time
Page Program cycle time (256 byte)
Page Program cycle time (n bytes, where n = 1 to 4) —
Page Program cycle time (n bytes, where n = 5 to
256)
Sector erase cycle time
Bulk erase cycle time
75 MHz available only for products made in 110 nm technology,
A
= 25°C.
Test conditions specified in
Parameter
C
Table 10
and
—
—
—
—
—
Min.
Table 12
int(n/8) × 0.02
Typ.
0.64
0.01
1.3
0.6
8
(1)
(7)
Max.
15
20
5
3
Unit
ms
ms
s
s