M25P32-VMF6P NUMONYX, M25P32-VMF6P Datasheet - Page 35

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M25P32-VMF6P

Manufacturer Part Number
M25P32-VMF6P
Description
IC FLASH 32MBIT 75MHZ 16SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25P32-VMF6P

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
32M (4M x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
16-SOIC
Package
16SO W
Cell Type
NOR
Density
32 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3.3 V
Sector Size
64KByte x 64
Timing Type
Synchronous
Interface Type
Serial-SPI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3597
497-3597

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Figure 19. Release from Deep Power-down and Read Electronic Signature (RES)
1. The value of the 8-bit Electronic Signature, for the M25P32, is 15h.
Figure 20. Release from Deep Power-down (RES) instruction sequence
Driving Chip Select (S) High after the 8-bit instruction byte has been received by the device, but before
the whole of the 8-bit Electronic Signature has been transmitted for the first time (as shown in
still ensures that the device is put into Standby Power mode. If the device was not previously in the Deep
Power-down mode, the transition to the Standby Power mode is immediate. If the device was previously
in the Deep Power-down mode, though, the transition to the Standby Power mode is delayed by t
and Chip Select (S) must remain High for at least t
Standby Power mode, the device waits to be selected, so that it can receive, decode and execute
instructions.
S
C
D
Q
S
C
D
Q
0
instruction sequence and data-out sequence
1
High Impedance
2
Instruction
3
4
High Impedance
0
5
1
6
2
Instruction
7
3
MSB
23
8
4
22 21
9 10
5
3 Dummy Bytes
6
7
3
28 29 30 31 32 33 34 35
2
RES1
1
Deep Power-down Mode
0
(max), as specified in
MSB
7
Electronic Signature Out
t
Deep Power-down Mode
RES1
6
5
4
3
36 37 38
2
Stand-by Mode
1
0
Table
t
RES2
14. Once in the
Stand-by Mode
Figure
AI04078B
AI04047C
RES1
35/54
20),
,

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