M29W400FB55N3F NUMONYX, M29W400FB55N3F Datasheet - Page 47

• Manufacturer Part Number: M29W400FB55N3F
• Description: IC FLASH 4MBIT 55NS 3V 48TSOP
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29W400FB55N3F

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 4M (512K x 8 or 256K x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 27.
× 16
2Ah
2Bh
2Ch
2Dh
2Eh
3Ah
3Bh
3Ch
27h
28h
29h
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
Address
5Ch
6Ch
4Eh
50h
52h
54h
56h
58h
5Ah
5Eh
60h
62h
64h
66h
68h
6Ah
6Eh
70h
72h
74h
76h
78h
× 8
Device geometry definition
0014h
000Eh
0002h
0000h
0000h
0000h
0004h
0000h
0000h
0040h
0000h
0001h
0000h
0020h
0000h
0000h
0000h
0080h
0000h
0000h
0000h
0001h
Data
Device size = 2
Flash device interface code description
Maximum number of bytes in multi-byte program or page =
2
Number of erase block regions within the device.
It specifies the number of regions within the device
containing contiguous erase blocks of the same size.
Region 1 information
Number of identical size erase block = 0000h+1
Region 1 information
Block size in region 1 = 0040h * 256 bytes
Region 2 information
Number of identical size erase block = 0001h+1
Region 2 information
Block size in region 2 = 0020h * 256 bytes
Region 3 information
Number of identical size erase block = 0000h+1
Region 3 information
Block size in region 3 = 0080h * 256 bytes
Region 4 information
Number of identical-size erase block = 000Eh+1
Region 4 information
Block size in region 4 = 0100h * 256 bytes
n
n
in number of bytes
Description
× 8, × 16
8 Kbytes
1 Mbyte
Kbytes
Kbytes
Kbytes
async.
Value
NA
16
32
15
64
4
1
2
1
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