NAND128W3A2BN6F NUMONYX, NAND128W3A2BN6F Datasheet - Page 21

• Manufacturer Part Number: NAND128W3A2BN6F
• Description: IC FLASH 128MBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND128W3A2BN6F

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 128M (16M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Package: 48TSOP
• Cell Type: NAND
• Density: 128 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 16KByte x 1024
• Timing Type: Asynchronous
• Interface Type: Parallel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NAND128-A, NAND256-A
Table 7.
1. A8 is ’don’t care’ in x16 devices.
2. Any additional address input cycles are ignored.
3. The 01h command is not used in x16 devices.
Table 8.
Cycle
A14 - A26
Bus
Address
A9 - A26
A9 - A13
2
3
1
A0 - A7
nd
st
rd
A8
I/O15
I/O8-
X
X
X
Address insertion, x16 devices
Address definitions
A8 is set Low or High by the 00h or 01h command, and is ’don’t care’ in x16 devices
I/O7
A16
A24
A7
I/O6
A15
A23
A6
I/O5
A14
A22
A5
Column address
Address in block
Block address
(1)(2)(3)
Page address
Definition
I/O4
A13
A21
A4
I/O3
A12
A20
A3
I/O2
A11
A19
A2
Bus operations
I/O1
A10
A18
A1
I/O0
A17
A0
A9
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