NAND128W3A2BN6F NUMONYX, NAND128W3A2BN6F Datasheet - Page 38

• Manufacturer Part Number: NAND128W3A2BN6F
• Description: IC FLASH 128MBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND128W3A2BN6F

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 128M (16M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Package: 48TSOP
• Cell Type: NAND
• Density: 128 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 16KByte x 1024
• Timing Type: Asynchronous
• Interface Type: Parallel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DC and AC parameters
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DC and AC parameters
This section summarizes the operating and measurement conditions and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics tables in this
section are derived from tests performed under the measurement conditions summarized in
Table
measurement conditions when relying on the quoted parameters.
Table 16.
Table 17.
1. T
2. Input/output capacitances double on stacked devices.
Supply voltage (V
Ambient (T
Load capacitance (C
and C
Input pulses voltages
Input and output timing ref. voltages
Input rise and fall times
Output circuit resistors, R
Symbol
C
C
A
I/O
IN
= 25 °C, f = 1 MHz. C
16. Designers should check that the operating conditions in their circuit match the
L
)
A
)
Operating and AC measurement conditions
Capacitance
Input/output capacitance
DD
Input capacitance
)
L
Parameter
) (1 TTL GATE
IN
ref
and C
Parameter
(1)(2)
I/O
are not 100% tested.
3 V devices (2.7 - 3.6 V)
3 V devices (3.0 - 3.6V)
Test condition
3 V devices
3 V devices
3 V devices
V
V
Grade 6
IN
IL
= 0 V
= 0 V
Typ
Min
–40
2.7
0.4
NAND128-A, NAND256-A
NAND flash
8.35
100
1.5
50
5
Max
10
10
Max
3.6
2.4
85
Units
Unit
pF
pF
kΩ
°C
pF
pF
ns
V
V
V