NAND128W3A2BN6F NUMONYX, NAND128W3A2BN6F Datasheet - Page 43

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NAND128W3A2BN6F

Manufacturer Part Number
NAND128W3A2BN6F
Description
IC FLASH 128MBIT 48TSOP
Manufacturer
NUMONYX
Datasheets

Specifications of NAND128W3A2BN6F

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
128M (16M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Package
48TSOP
Cell Type
NAND
Density
128 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3|3.3 V
Sector Size
16KByte x 1024
Timing Type
Asynchronous
Interface Type
Parallel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND128W3A2BN6F
Manufacturer:
MICROCHIP
Quantity:
1 000
Part Number:
NAND128W3A2BN6F
Manufacturer:
ST
Quantity:
20 000
Figure 33. Page Program AC Waveform
Note: Address cycle 4 is only required for 512Mb and 1Gb devices.
RB
CL
I/O
AL
W
R
E
Page Program
Setup Code
80h
(Write Cycle time)
tWLWL
cycle 1
Add.N
cycle 2
Address Input
Add.N
cycle 3
Add.N
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
cycle 4
Add.N
tWLWL
N
Data Input
tWHBL
(Program Busy time)
Last
tWLWL
Confirm
tBLBH2
Code
10h
Program
Page
Read Status Register
70h
SR0
ai08037
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