M25P32-VMW6G NUMONYX, M25P32-VMW6G Datasheet - Page 33

IC FLASH 32MBIT 75MHZ 8SOIC

M25P32-VMW6G

Manufacturer Part Number
M25P32-VMW6G
Description
IC FLASH 32MBIT 75MHZ 8SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25P32-VMW6G

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
32M (4M x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
Package
8SO W
Cell Type
NOR
Density
32 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3.3 V
Sector Size
64KByte x 64
Timing Type
Synchronous
Interface Type
Serial-SPI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Quantity
Price
Part Number:
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Manufacturer:
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Quantity:
12 000
Part Number:
M25P32-VMW6G
Manufacturer:
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Part Number:
M25P32-VMW6G
Manufacturer:
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6.11
Deep Power-down (DP)
Executing the Deep Power-down (DP) instruction is the only way to put the device in the
lowest consumption mode (the Deep Power-down mode). It can also be used as a software
protection mechanism, while the device is not in active use, as in this mode, the device
ignores all Write, Program and Erase instructions.
Driving Chip Select (S) High deselects the device, and puts the device in the Standby Power
mode (if there is no internal cycle currently in progress). But this mode is not the Deep
Power-down mode. The Deep Power-down mode can only be entered by executing the
Deep Power-down (DP) instruction, subsequently reducing the standby current (from I
I
To take the device out of Deep Power-down mode, the Release from Deep Power-down and
Read Electronic Signature (RES) instruction must be issued. No other instruction must be
issued while the device is in Deep Power-down mode.
The Release from Deep Power-down and Read Electronic Signature (RES) instruction also
allows the Electronic Signature of the device to be output on Serial Data Output (Q).
The Deep Power-down mode automatically stops at Power-down, and the device always
Powers-up in the Standby Power mode.
The Deep Power-down (DP) instruction is entered by driving Chip Select (S) Low, followed
by the instruction code on Serial Data Input (D). Chip Select (S) must be driven Low for the
entire duration of the sequence.
The instruction sequence is shown in
Chip Select (S) must be driven High after the eighth bit of the instruction code has been
latched in, otherwise the Deep Power-down (DP) instruction is not executed. As soon as
Chip Select (S) is driven High, it requires a delay of t
to I
Any Deep Power-down (DP) instruction, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Figure 18. Deep Power-down (DP) instruction sequence
CC2
S
C
D
CC2
, as specified in
and the Deep Power-down mode is entered.
0
Table
1
2
Instruction
14).
3
4
5
6
Figure
7
18.
DP
Stand-by Mode
before the supply current is reduced
t
DP
Deep Power-down Mode
AI03753D
CC1
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