M25P32-VMW6G NUMONYX, M25P32-VMW6G Datasheet - Page 52

• Manufacturer Part Number: M25P32-VMW6G
• Description: IC FLASH 32MBIT 75MHZ 8SOIC
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P32-VMW6G

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 32M (4M x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Package: 8SO W
• Cell Type: NOR
• Density: 32 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3.3 V
• Sector Size: 64KByte x 64
• Timing Type: Synchronous
• Interface Type: Serial-SPI
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Revision history
Table 22.
15-May-2003
24-Sep-2003
04-Dec-2003
10-Dec-2003
05-Aug-2004
01-Aug-2005
10-Feb-2006
28-Nov-2006
28-Apr-2003
20-Jun-2003
01-Apr-2004
01-Oct-2004
01-Apr-2005
23-Jan-2006
18-Jul-2003
Date
Document revision history
Revision
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0.6
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2.0
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4.0
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9
Target Specification Document written in brief form
Target Specification Document written in full
8x6 MLP8 and SO16(300 mil) packages added
t
SO16 package code changed. Output Timing Reference Voltage
changed.
Table of contents, warning about exposed paddle on MLP8, and Pb-free
options added.
Value of t
for VDFPN8 package.
Document promoted to Product Preview
Document promoted to Preliminary Data. Soldering temperature
information clarified for RoHS compliant devices. Device grade
information clarified
Device grade information further clarified
Document promoted to mature datasheet. Footnotes removed from P and
G options in Ordering Information table. Minor wording improvements
made.
Read Identification
Deep Power-down and Read Electronic Signature (RES)
Active Power, Standby Power and Deep Power-down modes
clarified.
Updated Page Program (PP) instructions in
Program (PP)
Fast Program/Erase mode
Program/Erase mode in
changed to W/V
(W/VPP)
t
Program/Erase mode added.
added below
removed under
VDFPN8 package specifications updated (see
mechanical).
MLP8 5 × 6 mm and SO8W packages added (see
mechanical).
Figure 4: Bus Master and memory devices on the SPI bus
explanation added below.
Table 9: Absolute maximum
Products in T9HX technology introduced (see
characteristics (T9HX
PP
VPPHSL
, t
SE
and t
added to Table 14: AC characteristics and t
VSL
description).
BE
(min) V
Figure 28
VCC supply voltage
and Table 14: AC characteristics.
revised
Plating Technology
PP
. (see
(RDID),
WI
, t
technology)). Small text changes.
All packages are RoHS compliant. Blank option
PP
Write Protect/Enhanced Program supply voltage
Power-up and Power-down
(typ) and t
added and Power-up specified for Fast
Deep Power-down (DP)
ratings: V
Figure 27: VPPH timing
Changes
and
in
BE
Table 20
IO
VSS ground
(typ) changed. Change of naming
max modified and T
Page
Table 15: AC
Section 11: Package
Programming,
Section 11: Package
descriptions added.
PP
and
section. W pin
inserted. Note
for Fast
instructions, and
Release from
updated and
LEAD
paragraph
Page
added.
2