M29W640GL70NA6E NUMONYX, M29W640GL70NA6E Datasheet - Page 37
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M29W640GL70NA6E
Manufacturer Part Number
M29W640GL70NA6E
Description
IC FLASH 64MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet
1.M29W640GH70NB6E.pdf
(90 pages)
Specifications of M29W640GL70NA6E
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
64M (8Mx8, 4Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Package
48TSOP
Cell Type
NOR
Density
64 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3|3.3 V
Sector Size
64KByte x 128
Timing Type
Asynchronous
Interface Type
Parallel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29W640GL70NA6E
Manufacturer:
MICRON
Quantity:
2 000
Figure 6.
1. Only the third and fourth cycles of the Program command are represented. The Program command is followed by the check
2. PA is address of the memory location to be programmed. PD is the data to be programmed.
3. DQ7 is the complement of the data bit being programmed to DQ7 (see
4. Addresses differ in x8 mode.
5. See
of status register data polling bit and by a read operation that outputs the data, D
Program command.
Table 19: Write AC characteristics
DQ0-DQ7/
DQ8-DQ15
A0-A20/
A–1
E
G
W
Write enable controlled program waveforms (8-bit mode)
tAVAV
tGHWL
tELWL
tWLWH
tDVWH
3rd cycle
tAVWL
555h
AOh
and
4th cycle
Table 18: Read AC characteristics
tWHEH
tWHDX
PA
tWHWL
PD
tWLAX
tWHWH1
Data Polling
PA
DQ7
Section 5.1: Data polling bit
D OUT
tAVAV
for details on the timings.
OUT
tGHQZ
Read cycle
, programmed by the previous
D OUT
tELQV
tGLQV
(DQ7)).
tAXQX
AI12779
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