CY62128EV30LL-45SXI Cypress Semiconductor Corp, CY62128EV30LL-45SXI Datasheet - Page 8

IC SRAM 1MBIT 45NS 32SOIC

CY62128EV30LL-45SXI

Manufacturer Part Number
CY62128EV30LL-45SXI
Description
IC SRAM 1MBIT 45NS 32SOIC
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr
Datasheet

Specifications of CY62128EV30LL-45SXI

Memory Size
1M (128K x 8)
Package / Case
32-SOIC (11.30mm Width)
Format - Memory
RAM
Memory Type
SRAM
Speed
45ns
Interface
Parallel
Voltage - Supply
2.2 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Access Time
45 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.2 V
Maximum Operating Current
16 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
2.5 V, 3.3 V
Memory Configuration
128K X 8
Supply Voltage Range
2.2V To 3.6V
Memory Case Style
SOIC
No. Of Pins
32
Operating Temperature Range
-40°C To +85°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-2065-5
CY62128EV30LL-45SXI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY62128EV30LL-45SXI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Part Number:
CY62128EV30LL-45SXIT
Manufacturer:
CYPRESS/PBF
Quantity:
587
Switching Waveforms
Truth Table
Notes
Document #: 38-05579 Rev. *I
26. CE is the logical combination of CE
27. The internal write time of the memory is defined by the overlap of WE, CE = V
28. Data I/O is high impedance if OE = V
29. If CE
30. During this period, the I/Os are in output state. Do not apply input signals.
31. The ‘X’ (Don’t care) state for the Chip enables in the truth table refer to the logic state (either HIGH or LOW). Intermediate voltage levels on these pins is not permitted.
ADDRESS
ADDRESS
CE
a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write.
X
DATA I/O
DATA I/O
H
L
L
L
[31]
1
1
goes HIGH or CE
WE
WE
CE
CE
CE
X
H
H
H
L
[31]
2
NOTE 30
2
goes LOW simultaneously with WE HIGH, the output remains in high impedance state.
WE
t
SA
X
X
H
H
L
1
Figure 9. Write Cycle No. 2 CE1 or CE2 controlled
(continued)
and CE
IH
Figure 10. Write Cycle No. 3 WE controlled, OE LOW
.
t
HZWE
OE
2
X
X
X
H
L
. When CE
t
SA
1
is LOW and CE
Inputs/Outputs
t
AW
t
Data out
AW
Data in
High Z
High Z
High Z
t
SCE
t
2
t
WC
WC
t
is HIGH, CE is LOW; when CE
PWE
IL
. All signals must be ACTIVE to initiate a write and any of these signals can terminate
t
PWE
t
DATA VALID
DATA VALID
t
SCE
SD
t
Selected, outputs disabled
SD
Deselect/power-down
Deselect/power-down
Mode
Read
Write
[26, 27, 28, 29]
1
is HIGH or CE
[26, 29]
t
HD
t
t
HA
LZWE
CY62128EV30 MoBL
t
HA
t
HD
2
is LOW, CE is HIGH.
Standby (I
Standby (I
Active (I
Active (I
Active (I
Power
Page 8 of 15
CC
CC
CC
SB
SB
)
)
)
)
)
®
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