M25P128-VME6TGB NUMONYX, M25P128-VME6TGB Datasheet - Page 16

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M25P128-VME6TGB

Manufacturer Part Number
M25P128-VME6TGB
Description
IC FLASH 128MBIT 65NM 3V 8VDFPN
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25P128-VME6TGB

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16M x 8)
Speed
50MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VDFPN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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5
Figure 7.
16/47
HOLD
W/V
Q
PP
C
D
S
Memory organization
The memory is organized as:
Each page can be individually programmed (bits are programmed from 1 to 0). The device is
Sector or Bulk Erasable (bits are erased from 0 to 1) but not Page Erasable.
Block diagram
Address Register
16777216 bytes (8 bits each)
64 sectors (2 Mbits, 262144 bytes each)
65536 pages (256 bytes each).
Control Logic
and Counter
00000h
I/O Shift Register
256 Bytes (Page Size)
High Voltage
Generator
X Decoder
Data Buffer
256 Byte
FFFFFFh
000FFh
Register
Status
memory area
Size of the
read-only
AI11316b

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