M25P128-VME6TGB NUMONYX, M25P128-VME6TGB Datasheet - Page 46

• Manufacturer Part Number: M25P128-VME6TGB
• Description: IC FLASH 128MBIT 65NM 3V 8VDFPN
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P128-VME6TGB

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 128M (16M x 8)
• Speed: 50MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-VDFPN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Revision history
Table 21.
02-May-2005
28-Aug-2005
10-Dec-2007
26-Nov-2009
17-Dec-2009
09-Jun-2005
20-Jan-2006
17-Oct-2006
1-Feb-2010
Date
Document revision history
Revision
0.1
0.2
0.3
1
2
3
4
5
6
First issue.
Table 2: Protected area sizes
Memory capacity modified in
Updated t
devices
threshold for 65 nm
Page programming
Document status promoted from Target specification to Preliminary
data.
Packages are ECOPACK® compliant. Blank option removed under
Plating technology
instruction removed. I
characteristics for 65 nm
Document status promoted from Preliminary Data to full Datasheet.
Write Protect pin (W) changed to
supply voltage
Figure 24: VPPH timing
Program/Erase mode in
Figure 4: Bus master and memory devices on the SPI bus
and
Note 1
Dual Flat Package No lead, 8 × 6mm, package mechanical
V
Applied Numonyx branding.
Removed references to multilevel cell technology and ECOPACK®
packages.
Added:
AC characteristics for 65 nm
process technology throughout the document
Modified D2 value in
Dual Flat Package No lead, 8 × 6mm, package mechanical
Added “Process Technology” to Ordering Information table.
Added sector erase cycle times to
65 nm
Changed Icc3 test conditions in
65 nm devices
IO
max modified in
Note 2
devices.
added below
Table 14: DC characteristics for 65 nm devices
and t
PP
added.
values in
VSL
(W/VPP).
as follows: 50 MHz to 54 MHz and 20 MHz to 33 MHz.
value in
in
and
devices. Modified information in
Table 10: Absolute maximum
Table 18: VDFPN8 (MLP8), 8-lead Very thin
Table 18: VDFPN8 (MLP8), 8-lead Very thin
Table
CC1
Table 17: AC characteristics for 130 nm
Section 6.8: Page program
added. Power-up specified for Fast
Power-up and power-down
Section 4.4: Fast program/erase mode
devices.
Table 8: Power-up timing and VWI
parameter updated in
20. Read Electronic Signature (RES)
devices, and references to 65 nm
Section 6.3: Read identification
Changes
updated.
Table 14.: DC characteristics for
Write protect/enhanced program
Table 15.: AC characteristics for
Table 14: DC
ratings.
(PP).
section.
Section 4.1:
and
modified
Table 15:
data.
data.
(RDID).
and