RC28F128M29EWLA NUMONYX, RC28F128M29EWLA Datasheet - Page 7

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RC28F128M29EWLA

Manufacturer Part Number
RC28F128M29EWLA
Description
IC FLASH 128MBIT 25NS 64BGA
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of RC28F128M29EWLA

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16Mx8, 8Mx16)
Speed
60ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-BGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RC28F128M29EWLA
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Numonyx
1
®
Axcell™ M29EW
Description
The Numonyx
65nm SBC (Single Bit per Cell) technology is the world’s leading line of parallel NOR flash
for embedded applications. They can be read, erased and reprogrammed; and these
operations can be performed using a single low voltage (2.7 to 3.6 V) supply. Upon power-
up, these memories default to their array read mode.
The main memory array is divided into 64-Kword/128-Kbyte blocks or 32-Kword/64-Kbyte
blocks that can be erased independently so that valid data can be preserved while old data
is purged. Program and Erase commands are written to the command interface of the
memory. An on-chip Program/Erase controller simplifies the process of programming or
erasing the memory by taking care of all of the special operations that are required to
update the memory contents. The end of a program or erase operation can be detected and
any error condition can be identified. The command set required to control the memory is
consistent with JEDEC standards.
Chip Enable, Output Enable and Write Enable signals control the bus operation of the
memory. They allow simple connection to most microprocessors, often without additional
logic.
The M29EW supports Asynchronous Random Read and Page Read from all blocks of the
memory array. It also features an internal program buffer which improves throughput by
programming up to 256 words via one command sequence.
The M29EW contains a 128-word Extended Memory Block which overlaps addresses with
array block 0. The user can program this additional space; then protect it to permanently
secure its contents.
The device features different levels of hardware and software protection to secure blocks
from unwanted modification (program or erase):
The M29EW is offered in TSOP56 (14 x 20 mm), TSOP48 (12 x 20 mm), Fortified BGA64
(11 x 13 mm, 1 mm pitch) and BGA48 (6 x 8 mm, 0.8 mm pitch) packages.
The memories are delivered with all bits erased (set to ‘1’).
Hardware protection:
Software protection:
V
(M29EWL), top two (M29EWT) or bottom two (M29EWB) blocks of the main
memory array.
Volatile Protection
Non-Volatile Protection
Password Protection
Password Access
PP
/WP# provides hardware protection for the highest (M29EWH), lowest
®
Axcell
TM
128-Mbit, 64-Mbit and 32-Mbit M29EW flash memories, based on
208031-04
Description
7

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