CY62157EV30LL-45ZXI Cypress Semiconductor Corp, CY62157EV30LL-45ZXI Datasheet - Page 4

IC SRAM 8MBIT 45NS 48TSOP

CY62157EV30LL-45ZXI

Manufacturer Part Number
CY62157EV30LL-45ZXI
Description
IC SRAM 8MBIT 45NS 48TSOP
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr

Specifications of CY62157EV30LL-45ZXI

Memory Size
8M (512K x 16)
Package / Case
48-TSOP I
Format - Memory
RAM
Memory Type
SRAM
Speed
45ns
Interface
Parallel
Voltage - Supply
2.2 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Access Time
45 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.2 V
Maximum Operating Current
25 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
2.5 V, 3.3 V
Density
8Mb
Access Time (max)
45ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
2.5/3.3V
Address Bus
19b
Package Type
TSOP-I
Operating Temp Range
-40C to 85C
Supply Current
25mA
Operating Supply Voltage (min)
2.2V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
48
Word Size
16b
Number Of Words
512K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-2080-5
CY62157EV30LL-45ZXI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY62157EV30LL-45ZXI
Manufacturer:
CYPRESS
Quantity:
3 000
Part Number:
CY62157EV30LL-45ZXI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. User guidelines are not tested.
Storage Temperature ............................. –65 °C to + 150 °C
Ambient Temperature with
Power Applied ........................................ –55 °C to + 125 °C
Supply Voltage to Ground
Potential .............................–0.3 V to 3.9 V (V
DC Voltage Applied to Outputs
in High Z State
DC Input Voltage
Electrical Characteristics
Over the Operating Range
Document #: 38-05445 Rev. *I
V
V
V
V
I
I
I
I
I
Notes
Parameter
IX
OZ
CC
SB1
SB2
5. V
6. V
7. Full device AC operation assumes a 100 s ramp time from 0 to V
8. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
9. Chip enables (CE
OH
OL
IH
IL
inputs can be left floating.
[9]
[9]
IL(min)
IH(max)
= –2.0 V for pulse durations less than 20 ns.
= V
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
Output leakage current GND < V
V
current
Automatic CE power
down current — CMOS
inputs
Automatic CE power
down current — CMOS
inputs
CC
CC
[5, 6]
+ 0.75 V for pulse durations less than 20 ns.
operating supply
1
[5, 6]
Description
and CE
............–0.3 V to 3.9 V (V
........ –0.3 V to 3.9 V (V
2
), byte enables (BHE and BLE) and BYTE (48-pin TSOP I only) need to be tied to CMOS levels to meet the I
I
I
I
I
V
V
V
V
GND < V
f = f
f = 1 MHz
CE
or (BHE and BLE) > V
V
f = f
f = 0 (OE and WE), V
CE
or (BHE and BLE) > V
V
f = 0, V
OH
OH
OL
OL
CC
CC
CC
CC
IN
IN
1
1
= 0.1 mA
= 2.1 mA, V
max
> V
max
> V
= –0.1 mA
= –1.0 mA, V
= 2.2 V to 2.7 V
= 2.7 V to 3.6 V
= 2.2 V to 2.7 V
= 2.7 V to 3.6 V
> V
> V
CC
CC
CC
(Address and Data Only),
= 1/t
CC
CC
CC max
Test Conditions
CCmax
CCmax
I
O
< V
< V
– 0.2 V, V
= 3.60 V
– 0.2 V or V
0.2 V or CE
– 0.2 V or CE
RC
CC
CC
+ 0.3 V)
+ 0.3 V)
+ 0.3 V)
CC
, Output Disabled
CC
V
I
CMOS levels
OUT
cc
> 2.70 V
CC
(min) and 200 s wait time after V
> 2.70 V
IN
CC
CC
CC
= V
= 0 mA
IN
< 0.2 V
= 3.60 V
2
2
< 0.2 V,
– 0.2 V,
– 0.2 V,
CCmax
< 0.2 V
< 0.2 V
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage ........................................> 2001 V
(MIL-STD-883, Method 3015)
Latch Up Current ...................................................> 200 mA
Operating Range
CY62157EV30LL Industrial/
–0.3
–0.3
Min Typ
Device
2.0
2.4
1.8
2.2
–1
–1
45 ns (Industrial/
Auto-A)
1.8
18
2
2
CC
[8]
stabilization.
V
V
Range
Auto-A
Auto-E
CC
CC
Max
0.4
0.4
0.6
0.8
+1
+1
25
3
8
8
+ 0.3
+ 0.3
CC
CY62157EV30 MoBL
= V
CC(typ)
–40 °C to +85 °C 2.2 V to 3.6 V
–40 °C to +125 °C
–0.3
–0.3
Min Typ
2.0
2.4
1.8
2.2
Temperature
–4
–4
, T
Ambient
55 ns (Auto-E)
A
= 25 °C.
1.8
18
SB1
2
2
[8]
/ I
SB2
V
V
/ I
CC
CC
Max
CCDR
0.4
0.4
0.6
0.8
+4
+4
35
30
30
4
Page 4 of 21
+ 0.3
+ 0.3
V
spec. Other
CC
[7]
Unit
mA
A
A
A
A
V
V
V
V
V
V
V
V
®
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