PC48F4400P0TB0EE NUMONYX, PC48F4400P0TB0EE Datasheet - Page 37

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PC48F4400P0TB0EE

Manufacturer Part Number
PC48F4400P0TB0EE
Description
IC FLASH 256MBIT 64EZBGA
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of PC48F4400P0TB0EE

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
512M (32Mx16)
Speed
95ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-EZBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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0
P33-65nm
Figure 10: Example Latency Count Setting Using Code 3
11.1.3
Figure 11: End of Wordline Timing Diagram
Datasheet
37
A [Max :1]
D Q[15 :0 ]
CLK
ADV#
W AIT
A[MAX:0]
OE#
A[MAX:1]
D[15:0]
End of Word Line (EOWL) Considerations
End of Wordline (EOWL) WAIT states can result when the starting address of the burst
operation is not aligned to a 16-word boundary; that is, A[3:0] of start address does
not equal 0x0.
end of wordline WAIT state(s), which occur after the first 16-word boundary is reached.
The number of data words and the number of WAIT states is summarized in
“End of Wordline Data and WAIT state Comparison” on page
and P33-65nm devices.
ADV#
CLK
CE#
Address
Figure 11, “End of Wordline Timing Diagram” on page 37
Latency Count
0
Code 3
1
High-Z
R103
Data
Address
2
Data
EOW L
3
38for both P33-130nm
t
Data
Order Number:320003-09
Data
Data
4
illustrates the
Table 13,
Mar 2010

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