CY62167EV30LL-45ZXI Cypress Semiconductor Corp, CY62167EV30LL-45ZXI Datasheet - Page 4

• Manufacturer Part Number: CY62167EV30LL-45ZXI
• Description: IC SRAM 16MBIT 45NS 48TSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY62167EV30LL-45ZXI

• Memory Size: 16M (2M x 8 or 1M x 16)
• Package / Case: 48-TSOP I
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 45 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.2 V
• Maximum Operating Current: 30 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 2.5 V, 3.3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65°C to + 150 °C
Ambient temperature with
power applied .......................................... –55 °C to + 125 °C
Supply voltage to ground
potential ..............................–0.3 V to 3.9 V V
DC voltage applied to outputs
in High Z state
Electrical Characteristics
Over the Operating Range
Capacitance
Document #: 38-05446 Rev. *I
V
V
V
V
I
I
I
I
I
C
C
Notes
Parameter
IX
OZ
CC
SB1
SB2
5. V
6. V
7. Full Device AC operation assumes a 100 μs ramp time from 0 to V
8. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
9. Under DC conditions the device meets a V
10. Chip enables (CE
11. Tested initially and after any design or process changes that may affect these parameters.
OH
OL
IH
IL
IN
OUT
Parameter
applicable to TSOP I package only.
[10]
IL
IH
(min) = –2.0 V for pulse durations less than 20 ns.
(max) = V
[11]
CC
[5, 6]
Input capacitance
Output capacitance
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
Output leakage current
V
current
Automatic power down
current—CMOS inputs
Automatic power down
current—CMOS inputs
+ 0.75 V for pulse durations less than 20 ns.
1
CC
..............–0.3 V to 3.9 V V
and CE
operating supply
2
), byte enables (BHE and BLE) and BYTE must be tied to CMOS levels to meet the I
Description
Description
IL
of 0.8 V. However, in dynamic conditions Input LOW Voltage applied to the device must not be higher than 0.7 V. This is
CC (max)
CC (max)
T
V
2.2 < V
2.7 < V
2.2 < V
2.7 < V
2.2 < V
2.7 < V
2.2 < V
2.7 < V
GND < V
GND < V
f = f
f = 1 MHz
CE
or (BHE and BLE) > V
V
f = f
f = 0 (OE, and WE),
V
and BLE) > V
V
f = 0, V
CE1 > V
A
CC
IN
CC
IN
= 25 °C, f = 1 MHz,
+ 0.3 V
+ 0.3 V
1
max
max
= V
> V
> V
> V
= V
CC
CC(typ)
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
(min) and 200 μs wait time after V
= 1/t
(address and data only),
CC
CC
CC
I
O
< V
< 2.7
< 3.6
< 2.7
< 3.6
< 2.7
< 3.6
< 2.7
< 3.6
= V
– 0.2V, V
– 0.2 V or V
< V
(max)
– 0.2 V or CE
– 0.2V or CE2 < 0.2 V or (BHE
RC
Test Conditions
Test Conditions
CC
CC
CC
CC
– 0.2 V,
, Output disabled
(max)
DC input voltage
Output current into outputs (LOW) ............................. 20 mA
Static discharge voltage........................................... >2001 V
(MIL-STD-883, Method 3015)
Latch-up current ...................................................... >200 mA
Operating Range
CY62167EV30LL
IN
I
I
I
I
For VFBGA package
For TSOP I package
V
I
CMOS levels
OH
OH
OL
OL
OUT
CC
< 0.2 V)
CC
IN
Device
= 0.1 mA
= 2.1 mA
= –0.1 mA
= –1.0 mA
2
< 0.2 V,
= V
– 0.2 V,
= 0 mA
< 0.2 V
CC
(max)
CC
[5, 6]
stabilization.
........ –0.3 V to 3.9 V (V
Industrial/
Range
Auto-A
SB2
CC
/ I
CY62167EV30 MoBL
= V
CCDR
–0.3
–0.3
–0.3
45 ns (Industrial/Auto-A)
Min
2.0
2.4
1.8
2.2
–1
–1
CC
–
–
–
–
–
–
(typ), T
spec. Other inputs can be left floating.
Max
10
10
Temperature
Typ
–40 °C to
Ambient
A
2.2
1.5
1.5
+85 °C
25
–
–
–
–
–
–
–
–
–
–
–
= 25 °C.
[8]
CC
V
V
CC
CC
(max) + 0.3 V
0.7
Max
0.4
0.4
0.6
0.8
4.0
+ 0.3 V
+ 0.3 V
+1
+1
30
12
12
2.2 V to 3.6 V
–
–
Page 4 of 16
[9]
Unit
pF
pF
V
CC
[7]
Unit
mA
mA
μA
μA
μA
μA
V
V
V
V
V
V
V
V
V
®
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