M48Z128Y-70PM1 STMicroelectronics, M48Z128Y-70PM1 Datasheet - Page 11

• Manufacturer Part Number: M48Z128Y-70PM1
• Description: IC NVSRAM 1MBIT 70NS 32DIP
• Manufacturer: STMicroelectronics
• Type: NVSRAMr

Specifications of M48Z128Y-70PM1

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 1M (128K x 8)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-DIP (600 mil) Module
• Data Bus Width: 8 bit
• Organization: 128 Kb x 8
• Interface Type: Parallel
• Access Time: 70 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Operating Current: 105 mA
• Maximum Operating Temperature: 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: Through Hole
• Word Size: 8b
• Density: 1Mb
• Access Time (max): 70ns
• Operating Supply Voltage (typ): 5V
• Package Type: PMDIP
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 4.5V
• Operating Temp Range: 0C to 70C
• Pin Count: 32
• Mounting: Through Hole
• Supply Current: 105mA
• Memory Configuration: 128K X 8
• Nvram Features: Internal Battery
• Supply Voltage Range: 4.5V To 5.5V
• Memory Case Style: PMDIP
• No. Of Pins: 32
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2874-5

M48Z128, M48Z128Y, M48Z128V
2.4
V
I
fluctuations, resulting in spikes on the V
capacitors are used to store energy which stabilizes the V
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 µF (see
is recommended in order to provide the needed filtering.
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, ST recommends connecting a schottky
diode from V
is recommended for through hole and MBRS120T3 is recommended for surface-mount).
Figure 8.
CC
CC
transients, including those produced by output switching, can produce voltage
noise and negative going transients
CC
Supply voltage protection
to V
SS
(cathode connected to V
V CC
Doc ID 2426 Rev 5
0.1µF
CC
CC
that drive it to values below V
bus. These transients can be reduced if
CC
, anode to V
V CC
V SS
DEVICE
CC
bus. The energy stored in the
SS
). (Schottky diode 1N5817
SS
Operating modes
by as much as
Figure
AI02169
11/20
8)