M48Z128Y-70PM1 STMicroelectronics, M48Z128Y-70PM1 Datasheet - Page 7

IC NVSRAM 1MBIT 70NS 32DIP

M48Z128Y-70PM1

Manufacturer Part Number
M48Z128Y-70PM1
Description
IC NVSRAM 1MBIT 70NS 32DIP
Manufacturer
STMicroelectronics
Type
NVSRAMr
Datasheets

Specifications of M48Z128Y-70PM1

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
1M (128K x 8)
Speed
70ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
32-DIP (600 mil) Module
Data Bus Width
8 bit
Organization
128 Kb x 8
Interface Type
Parallel
Access Time
70 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Operating Current
105 mA
Maximum Operating Temperature
70 C
Minimum Operating Temperature
0 C
Mounting Style
Through Hole
Word Size
8b
Density
1Mb
Access Time (max)
70ns
Operating Supply Voltage (typ)
5V
Package Type
PMDIP
Operating Temperature Classification
Commercial
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
4.5V
Operating Temp Range
0C to 70C
Pin Count
32
Mounting
Through Hole
Supply Current
105mA
Memory Configuration
128K X 8
Nvram Features
Internal Battery
Supply Voltage Range
4.5V To 5.5V
Memory Case Style
PMDIP
No. Of Pins
32
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2874-5

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
M48Z128Y-70PM1
Manufacturer:
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Part Number:
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Manufacturer:
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Quantity:
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Part Number:
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M48Z128, M48Z128Y, M48Z128V
2
Note:
2.1
Operating modes
The M48Z128/Y/V also has its own power-fail detect circuit. The control circuitry constantly
monitors the single V
tolerance, the circuit write protects the SRAM, providing a high degree of data security in the
midst of unpredictable system operation brought on by low V
switchover voltage (V
until valid power returns.
Table 2.
1. See
X = V
READ mode
The M48Z128/Y/V is in the READ mode whenever W (WRITE enable) is high and E (chip
enable) is low. The device architecture allows ripple-through access of data from eight of
1,048,576 locations in the static storage array. Thus, the unique address specified by the 17
address inputs defines which one of the 131,072 bytes of data is to be accessed. Valid data
will be available at the data I/O pins within address access time (t
address input signal is stable, providing that the E and G (output enable) access times are
also satisfied. If the E and G access times are not met, valid data will be available after the
later of chip enable access time (t
the eight three-state data I/O signals is controlled by E and G. If the outputs are activated
before t
inputs are changed while E and G remain low, output data will remain valid for output data
hold time (t
Deselect
WRITE
READ
READ
Deselect
Deselect
Mode
IH
Table 10 on page 15
AVQV
or V
AXQX
IL
, the data lines will be driven to an indeterminate state until t
V
Operating modes
; V
SO
4.75 to 5.5 V
) but will go indeterminate until the next address access.
SO
4.5 to 5.5 V
3.0 to 3.6 V
to V
≤ V
= battery backup switchover voltage.
V
PFD
or
or
SO
CC
CC
SO
(1)
), the control circuitry connects the battery which maintains data
for details.
(min)
supply for an out of tolerance condition. When V
(1)
Doc ID 2426 Rev 5
ELQV
V
V
V
V
E
X
X
IH
IL
IL
IL
) or output enable access time (t
V
V
G
X
X
X
X
IH
IL
V
V
V
W
X
X
X
IH
IH
IL
DQ0-DQ7
CC
High Z
High Z
High Z
High Z
D
D
OUT
. As V
IN
AVQV
CC
) after the last
Battery backup mode
GLQV
AVQV
falls below the
CC
Operating modes
CMOS standby
is out of
). The state of
. If the address
Standby
Power
Active
Active
Active
7/20

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